1 edition 1.2 july 1999 FLU17XM l-band medium & high power gaas fet item drain-source voltage v gate-source voltage v total power dissipation storage temperature channel temperature w c c symbol v ds v gs pt t stg t ch 15 -5 7.5 -65 to +175 +175 rating tc = 25 c condition unit absolute maximum ratings (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain - source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 9.6 and -1.0 ma respectively with gate resistance of 200 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. item drain current transconductance pinch-off voltage gate-source breakdown voltage output power at 1 db g.c.p. power gain at 1 db g.c.p. power added efficiency thermal resistance symbol i dss v gso - 300 - - 600 900 -1.0 -2.0 -3.5 -5 - - 31.5 32.5 - 12.5 13.5 - - 46 - - 15 20 v ds = 5v, v gs =0v v ds = 5v, i ds =400ma v ds = 5v, i ds =30ma i gs = -30 a channel to case g.c.p.: gain compression point v ds = 10v f=2.0 ghz i ds =0.6i dss ma ms v db dbm v c/w % gm v p p 1db g 1db add r th conditions unit limits typ. max. min. electrical characteristics (ambient temperature ta=25 c) case style: xm note: the rf parameters are measured on a lot basis by sample testing at an aql = 0.1%, level-ii inspection. any lot failure shall be 100% retested. features ?high output power: p 1db =32.5dbm (typ.) ?high gain: g 1db =13.5db (typ.) ?high pae: add =46% (typ.) ?hermetic metal/ceramic (smt) package ?tape and reel available description the FLU17XM is a gaas fet designed for base station applications in the pcn/pcs frequency range. this is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLU17XM l-band medium & high power gaas fet power derating curve drain current vs. drain-source voltage 4 2 8 10 6 0 50 100 150 200 2 046810 case temperature ( c) drain-source voltage (v) total power dissipation (w) 200 600 400 drain current (ma) v gs =0v -0.5v -1.5v -2.0v -1.0v output power vs. input power v ds =10v i ds 0.6i dss f = 2.0 ghz 12 14 16 18 20 22 input power (dbm) 33 31 29 27 25 23 30 40 50 20 10 output power (dbm) add p out add (%)
3 FLU17XM l-band medium & high power gaas fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | .05 0.1 42 6 8 4 1 1.5 2 3 2 2 3 3 1 1 250 100 10 25 50 ? 0.5 ghz 0.5 ghz 5 5 0.5 ghz 0.5 ghz 5 4 4 5 s-parameters v ds = 10v, i ds = 360ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 .954 -33.9 16.330 160.4 .012 72.2 .335 -18.7 500 .839 -112.6 8.817 107.9 .028 33.4 .307 -80.7 1000 .831 -146.9 4.930 78.0 .030 18.4 .378 -106.7 1500 .824 -162.5 3.299 58.2 .029 16.6 .472 -118.6 2000 .825 -172.5 2.428 42.0 .027 21.1 .555 -128.3 2500 .825 179.7 1.912 28.1 .028 35.2 .628 -136.0 3000 .820 172.6 1.567 15.2 .032 39.3 .682 -143.3 3500 .809 165.9 1.337 3.3 .038 43.3 .726 -149.3 4000 .794 159.2 1.183 -8.3 .048 45.0 .761 -155.1 4500 .775 152.5 1.079 -19.8 .057 43.5 .790 -160.5 5000 .739 145.5 1.015 -32.1 .067 39.4 .816 -165.9
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLU17XM l-band medium & high power gaas fet 3.8 0.15 (0.150) 3.35 (0.132) 4.4 0.15 (0.173) 4.2 0.1 (0.165) 0.7 (0.028) 0.5 (0.020) 0.5 (0.020) 1.7 0.2 (0.067) 0.15 0.05 (0.006) unit: mm(inches) 1. gate 2. source 3. drain 2.865 (0.112) 3.13 0.15 2.265 (0.089) 2.0 0.15 4.0 0.15 (0.159) case style "xm" metal-ceramic hermetic package 2 45 1 3 0.7 (0.028) 6.3 (0.248)
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